Green light emitting diodes on a-plane GaN bulk substrates
نویسندگان
چکیده
We report the development of 520–540 nm green light emitting diodes LEDs grown along the nonpolar a axis of GaN. GaInN /GaN-based quantum well structures were grown in homoepitaxy on both, a-plane bulk GaN and a-plane GaN on r-plane sapphire. LEDs on GaN show higher, virtually dislocation-free crystalline quality and three times higher light output power when compared to those on r-plane sapphire. Both structures show a much smaller wavelength blue shift for increasing current density 10 nm for 0.1 to 12.7 A /cm2 than conventional LEDs grown along the polar c axis. © 2008 American Institute of Physics. DOI: 10.1063/1.2945664
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